부산대학교 도서관

In this paper, the terahertz power radiation of AlGaN/GaN heterostructures with metal grating gate will be studied at room temperature. Terahertz radiation at different gate and drain bias voltages was applied. The calculated output power increases linearly with the drain input power. This kind of radiation emission can be understood as a combination of thermal radiation and electrical excitation. This finding implies that the grating-gate array can generate higher power even have less number of devices per unit area. The study of the radiation power has implications for the design and optimization of future terahertz sources.