학술논문
A HfO2 based 800V/300°C Au-free AlGaN/GaN-on-Si HEMT technology
Document Type
Conference
Author
Source
2012 24th International Symposium on Power Semiconductor Devices and ICs Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on. :37-40 Jun, 2012
Subject
Language
ISSN
1943-653X
1063-6854
1946-0201
1063-6854
1946-0201
Abstract
Innovative 800V/300°C AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) fabricated with a 4-inch Si CMOS compatible technology are presented in this paper. High performance AlGaN/GaN MIS gated HEMT (MIS-HEMT) and passivated HEMT (i-HEMT) were fabricated using 5nm-thick HfO 2 , and 30nm-thick CVD Si 3 N 4 as the gate and passivation insulator, respectively. Contact resistance maps yield reduced R c of 1.32±0.26 Ωmm for Au-free compared to 0.86±0.58 Ωmm for conventional Au-based Ohmic metallization. The off-state breakdown voltage is around 800V with a specific on-resistance of 2 mΩcm 2 . Gate and drain leakage currents as well as dynamic I–V trapping are significantly improved with the MIS-HEMT architecture with almost no trade-off to the on-state.