학술논문
An IGBT gate driver integrated circuit with full-bridge output stage and short circuit protections
Document Type
Conference
Author
Source
2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676) Semiconductor conference. CAS 2003 Semiconductor Conference, 2003. CAS 2003. International. 2:245-248 Vol. 2 2003
Subject
Language
Abstract
This paper presents a monolithic IGBT gate driver design with an original full-bridge topology output stage, implemented with high voltage LDMOSFETS (36-160V/1A) for power integrated circuits using standard low cost 2.5/spl square/m CMOS technology and oriented for digital applications. Short circuit protections have been also integrated. The full-bridge topology allows obtaining positive and negative gate voltages using a single floating power supply and the implementation of a soft shutdown process following a short circuit fault can be easily reached.