학술논문
High channel mobility in 4H-SiC N-MOSFET using N2O oxidation combined with Boron diffusion treatment
Document Type
Conference
Author
Source
2017 Spanish Conference on Electron Devices (CDE) Electron Devices (CDE), 2017 Spanish Conference on. :1-4 Feb, 2017
Subject
Language
Abstract
A new gate oxide configuration, including a Boron treatment, is reported in this work. It is designed to improve the SiO 2 /SiC interface quality in 4H-SiC N-MOSFETs. The obtained results show high field effect mobilities up to 160 cm 2 /Vs. The fabricated devices have also been undergone to a BSI stress up to 20 h at room temperature showing good threshold voltage stability. The physical (SIMS) analysis of the oxide and SiC surface reveals that Boron has not diffused into the SiC.