학술논문
On-Resistance–Reliability Tradeoffs in Al₂O₃/LaAlO₃/SiO₂ Gate for SiC Power MOSFETs
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(2):675-682 Feb, 2023
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
On-resistance–reliability tradeoffs are investigated for SiC power MOSFETs using Al2O3/LaAlO3/SiO2 gate dielectrics. Due to the high gate capacitance, the Al2O3/LaAlO3/SiO2 gate device shows an improvement on the channel resistance ( ${R}_{\text {ch}}$ ) versus threshold voltage shift ( ${\Delta } {V}_{\text {th}}$ ) tradeoff compared to the SiO2 gate counterpart. Besides, the short-circuit withstand time of the Al2O3/LaAlO3/SiO2 gate device is 1.55 times longer than that of the SiO2 gate device, while the two devices have the same on-resistance. Furthermore, the predicted lifetime of the Al2O3/LaAlO3/SiO2 gate device is ten years at an effective electric field ( ${E}_{\text {eff}}$ ) of 4.8 MV/cm, which is comparable with the latest reported result of the SiO2 gate counterpart.