학술논문
Fabrication and modeling of optical interconnects using selective area growth metalorganic chemical vapor deposition
Document Type
Conference
Author
Source
Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130) Semiconductor laser conference Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International. :197-198 1998
Subject
Language
ISSN
0899-9406
Abstract
A computational model for selective area growth has been verified using a comprehensive suite of experimental measurements: atomic force microscopy, optical interference microscopy, microphotoluminescence, and micro-Xray diffraction. The model then allows for constructive engineering of the material thickness and composition through manipulation of the oxide mask used in selective area growth. This can be a fundamental input to the design of optical interconnects and integrated photonic devices.