학술논문
A super low noise V-band AlInAs/InGaAs HEMT processed by selective wet gate recess etching
Document Type
Conference
Author
Source
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4) Microwave symposium Microwave Symposium Digest, 1994., IEEE MTT-S International. :645-648 vol.2 1994
Subject
Language
ISSN
0149-645X
Abstract
A 0.15 /spl mu/m T-shaped gate AlInAs/InGaAs high electron mobility transistor (HEMT) with excellent RF performances has been developed using a selective wet gate recess etching. An extremely low minimum noise figure (Fmin) of 0.9 dB with an associated gain (Ga) of 7.0 dB has been achieved at 60 GHz for a SiON-passivated device. This is the lowest value of Fmin ever reported for AlInAs/InGaAs HEMT with a passivation film.ETX