부산대학교 도서관

To evaluate the characteristics of Pb(Zr,Ti)O 3 (PZT) thin films (about $10~\mu \text{m}$ thick) with three different sputtering configurations—single-layer (SL) deposition, multilayer (ML) deposition with internal electrodes, and multistep (MS) deposition—were prepared. The SL films exhibited poorer dielectric characteristics than the ML and MS films. The reliability and piezoelectric characteristics were especially high in the MS film, with an ${e}_{{31},\text {f}}$ constant of −9.5 C · m −2 . To investigate the porosity of the films, reconstructed 3-D SEM technique is employed. Reconstructed 3-D SEM images revealed decreased void densities in the ML and MS films, which improved their performance. The MS configuration provided the best dielectric and piezoelectric performance of PZT films.