부산대학교 도서관

Wrap-around gate GaN nanowire MOSFETs using Al 2 O 3 as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of 60 mV/dec, an average subthreshold slope of 68 mV/dec over three decades of drain current, drain-induced barrier lowering of 27 mV/V, an on-current of $42~\mu \text {A}/\mu \text{m}$ (normalized by nanowire circumference), on/off ratio over $10^{8}$ , an intrinsic transconductance of $27.8~\mu \text {S}/\mu \text{m}$ , for a switching efficiency figure of merit, ${Q}={g}_{m}$ /SS of $0.41~\mu \text{S}/\mu \text{m}$ -dec/mV. These performance metrics make GaN nanowire MOSFETs a promising candidate for emerging low-power applications, such as sensors and RF for the Internet of Things.