학술논문
Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(6):3215-3222 Jun, 2023
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
Effects of programming/erasing (P/E) and total-ionizing dose (TID) are investigated on 2- and 40-fin charge-trap transistors (CTTs) fabricated in a 14-nm bulk-Si CMOS technology. Significant random telegraph noise (RTN) is observed in as-processed CTTs, especially for 2-fin devices. Trapped charge in programed devices does not significantly affect 1/ ${f}$ noise magnitudes, but P/E leads to trap activation/deactivation, causing changes in border-trap energy and spatial distributions. TID irradiation activates a large number of stable radiation-induced traps.