학술논문
Germanium-tin on Silicon p-i-n photodiode with low dark current due to sidewall surface passivation
Document Type
Conference
Author
Source
2015 Optical Fiber Communications Conference and Exhibition (OFC) Optical Fiber Communications Conference and Exhibition (OFC), 2015. :1-3 Mar, 2015
Subject
Language
Abstract
We demonstrate that the surface leakage current of a Ge 0.95 Sn 0.05 /Si p-i-n photodiode can be significantly reduced by -two orders by Si surface passivation. Furthermore, a dark current density of 0.073A/cm 2 (V bias = −1 V) is achieved.