학술논문
Reduction of Electrical Crosstalk in Hybrid Backside Illuminated CMOS Imagers using Deep Trench Isolation
Document Type
Conference
Author
Source
2008 International Interconnect Technology Conference Interconnect Technology Conference, 2008. IITC 2008. International. :129-131 Jun, 2008
Subject
Language
ISSN
2380-632X
2380-6338
2380-6338
Abstract
Hybrid backside illuminated CMOS imagers with zero pixel-to-pixel electrical crosstalk were developed. The application of highly doped polysilicon filled high aspect ratio trenches between pixels to reduce crosstalk is unique. These 1μm wide 50μm deep trenches enforce a lateral drift field between pixels, which counteracts diffusion and drastically reduces electrical crosstalk. Quantitative crosstalk characterization of trenched and non-trenched imagers is presented.