학술논문
On nucleation and growth mechanisms of EBPVD zirconia films on porous NiO-ZrO2 substrate
Document Type
Conference
Author
Source
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Oxide Materials for Electronic Engineering (OMEE), 2012 IEEE International Conference on. :92-93 Sep, 2012
Subject
Language
Abstract
Thin structure of the anode-electrolyte interface (AEI) was studied, and plausible nucleation and growth mechanisms at electron-beam physical vapor deposition (EB-PVD) were established. ZrO 2 condensates with two mechanisms - planar and cellular ones like it happens at solidification from liquid phase. ZrO 2 condensation on ZrO 2 and NiO phases occurs with two different routes. On ZrO 2 phase, layer of planar growth is formed with “defective layer by defective layer” mechanism. On NiO, the layer is cellular from the very beginning of the deposition process. The layer of planar growth is formed as “dense layer by dense layer”. Deposition affected zone (DAZ) is clearly distinguished.