학술논문

Optimized load modulation in a Doherty amplifier using a current injection technique
Document Type
Conference
Source
2011 6th European Microwave Integrated Circuit Conference Microwave Integrated Circuits Conference (EuMIC), 2011 European. :296-299 Oct, 2011
Subject
Fields, Waves and Electromagnetics
Signal Processing and Analysis
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Impedance
Power amplifiers
Power generation
Power transmission lines
Load modeling
HEMTs
Transmission line measurements
Doherty amplifier
back-off high efficiency
load modulation
Language
Abstract
The classical Doherty configuration suffers from a lack of accurate control of the load impedance performed by the peaking stage. The result is a reduction in the maximum obtainable efficiency and linearity performance for a given input power level. By driving the carrier and peaking power amplifiers independently, it is possible to present the optimum load to the carrier stage for either maximum efficiency, linearity or anywhere in between for any input power level. This paper proposes the injection of a controllable current into the load to create the required active load-pull. Simulations in ADS using a 10W GaN HEMT device are presented for maximum efficiency. Two different Doherty power combining networks are used and the required current for each network is explained. Measurements of a class-F amplifier in a Doherty current injection architecture are taken and drain efficiency versus output power is plotted showing a potential of 10dB dynamic range of output power with a tracked drain efficiency between 65–70%.