학술논문
High performance germanium n-MOSFET with antimony dopant activation beyond 1×1020 cm−3
Document Type
Conference
Author
Source
2010 International Electron Devices Meeting Electron Devices Meeting (IEDM), 2010 IEEE International. :10.5.1-10.5.4 Dec, 2010
Subject
Language
ISSN
0163-1918
2156-017X
2156-017X
Abstract
For the first time, high performance Ge nMOSFET is fabricated using laser annealing of ion-implanted antimony (Sb) dopants which provides donor activation beyond 1×10 20 cm −3 in germanium. Record I on /I off > 10 5 is demonstrated for n + /p junctions combined with significant reduction of contact resistance to 7×10 −7 Ω-cm 2 . Performance projections for ITRS HP 22nm technology node are also discussed.