부산대학교 도서관

We report the experimental demonstration of deep-submicrometer inversion-mode $\hbox{In}_{0.75}\hbox{Ga}_{0.25}\hbox{As}$ MOSFETs with ALD high- $k$ $\hbox{Al}_{2}\hbox{O}_{3}$ as gate dielectric. In this letter, n-channel MOSFETs with 100–200-nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices with 200–130-nm-long gates exhibit drain currents of 232–440 $\mu\hbox{A}/\mu\hbox{m}$ and transconductances of 538–705 $\mu\hbox{S}/\mu\hbox{m}$. The 100-nm device has a drain current of 801 $\mu\hbox{A}/\mu\hbox{m}$ and a transconductance of 940 $\mu\hbox{S}/\mu\hbox{m}$. However, the device cannot be pinched off due to severe short-channel effect. Important scaling metrics, such as on/off current ratio, subthreshold swing, and drain-induced barrier lowering, are presented, and their relations to the short-channel effect are discussed.