학술논문
Investigation of Dielectric and Quantum Confinement Based Dopant Deactivation in the Extension Region of FinFET
Document Type
Periodical
Author
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 43(8):1171-1174 Aug, 2022
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
Spacers with low dielectric constant have been significantly explored in the literature to reduce delay due to the parasitic capacitance. However, it substantially increases parasitic resistance due to Dielectric and Quantum Confinement based Dopant Deactivation (DQC-DD). In this letter, we have investigated the experimental signature of DQC-DD in the extension region of the FinFET and observed a significant reduction in the ON current due to it. Hence, it is essential to include DQC-DD into the simulation of FinFET, particularly those with narrow fin width, for the correct prediction of delay following the experiment.