학술논문
Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI
Document Type
Periodical
Author
Source
IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 23(3):337-345 Sep, 2023
Subject
Language
ISSN
1530-4388
1558-2574
1558-2574
Abstract
We studied the impact of gate and drain stress biases combination on IGZO based TFTs degradation targeting hot carrier regime. We show that typical signatures of this mechanism (e.g., saturation current degradation and SS increase) are not visible even at high drain biases, while a gate bias dependence only (BTI) is present in most of the degradation data. We also identify an unexpected gate-length dependence of BTI, for which different extrinsic causes are investigated.