학술논문

A 120-Gb/s 100–145-GHz 16-QAM Dual-Band Dielectric Waveguide Interconnect With Package Integrated Diplexers in Intel 16
Document Type
Periodical
Source
IEEE Solid-State Circuits Letters IEEE Solid-State Circuits Lett. Solid-State Circuits Letters, IEEE. 5:178-181 2022
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Dielectrics
Bandwidth
Dispersion
Transceivers
Radio frequency
Electromagnetic waveguides
Mixers
CMOS
dielectric waveguide
diplexer
dual band
equalization
F-band
flip chip
frequency division multiplexing (FDM)
interconnect
launcher
mmWave
organic package
quadrature amplitude modulation (QAM)
sub-THz
transceiver
wireline
Language
ISSN
2573-9603
Abstract
This letter presents a dual-band superheterodyne transceiver system in Intel 16 operating at 109 and 135 GHz center frequencies with a measured rejection >60 dB within the 11 GHz guard band. The transceiver is flip-chip assembled on a multilayer organic package, which integrates hairpin resonator diplexers and electromagnetic waveguide launchers. A connector assembled on the organic package feeds a 3–4-m long PTFE dielectric waveguide ensuring a stable mechanical connection. This letter demonstrates up to 120 Gb/s data rates with measured error vector magnitudes (EVMs) between −19.2 dB and −16.2 dB at 3–4-m distances with combined power consumption of 1116 mW. This is the first work in the literature reporting beyond 60 Gb/s over dielectric waveguide channels at link distances greater than 1 m. Combining frequency division multiplexing with a low tap count FFE equalizer and sharp on-die analog and RF filtering with a low loss on package diplexer enabled the >100 Gb/s at multimeter distances.