학술논문

Exponential-doping III–V photocathodes with negative electron affinity
Document Type
Conference
Source
2010 8th International Vacuum Electron Sources Conference and Nanocarbon Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International. :59-61 Oct, 2010
Subject
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Photonics and Electrooptics
Cathodes
Reflection
Gallium nitride
Language
Abstract
The review of the studies of exponential-doping III–V photocathode with negative electron affinity (NEA) performed by the authors at the Nanjing University of Science and Technology (Nanjing) are presented. The results of these studies are used for further improving the performance of NEA photocathode. In particular, the requirements to III–V photocathode, which are necessary for the preparation of NEA photocathode with ultimate parameters, are analyzed. To meet these requirements, the academic researches aimed at designing structure and optics capability of photocathode, and the experimental procedures aimed at material growth, atomical cleanness, and NEA activation, are developed. The optics capability, carrier concentration distribution, surface photovoltage spectroscopy characterization of varied-doping, spectral response of photocathodes are studied, and the relation of these phenomena to the physical limits of NEA photocathode performance are discussed.