학술논문

New SOS Diode Pumping Circuit Based on an All-Solid-State Spiral Generator for High-Voltage Nanosecond Applications
Document Type
Periodical
Source
IEEE Transactions on Plasma Science IEEE Trans. Plasma Sci. Plasma Science, IEEE Transactions on. 51(10):2858-2865 Oct, 2023
Subject
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Semiconductor diodes
Spirals
Generators
Voltage measurement
Voltage
Switching circuits
High-voltage techniques
Pulsed power systems
semiconductor opening switches (SOSs)
solid-state circuits
spiral generators (SGs)
Language
ISSN
0093-3813
1939-9375
Abstract
Semiconductor opening switch (SOS) diodes are capable to switch currents with a density of more than 1 kA/cm 2 and withstand nanosecond pulses with an amplitude of up to 1 MV. SOS diodes, however, require a specific pumping circuit that must simultaneously provide forward and reverse pumping currents with a time of $\sim $ 500 and $\sim $ 100 ns, respectively. Such a pumping circuit with energies $>$ 1 J typically requires a gas-discharge switch or a low-efficient solid-state solution. This study proposes a novel approach to pumping SOS diodes based on a spiral generator (SG) (also known as a vector inversion generator). Due to its wave characteristics, the SG produces a bipolar current discharge that meets the time duration and current amplitude required to pump an SOS diode. Moreover, the initial pulse from the spiral typically has a relatively low current amplitude compared to the opposite polarity secondary pulse, so the SOS diode can operate at very high efficiencies. This idea has been tested using an all-solid-state SG coupled with large-area SOS diodes (1 cm 2). With this combination, a voltage pulse of 62 kV having a rise time of only 11 ns was obtained on an open circuit load (3 pF, 1 $\text{M}\Omega $ ). The experiments were highly repeatable, with no damage to the components despite multiple tests. There is significant scope to further improve the results, with simple alterations to the SG.