학술논문
Advantages of GaSb/AlSb LO phonon depopulation terahertz quantum cascade laser on GaAs substrate
Document Type
Conference
Author
Source
2006 IEEE MTT-S International Microwave Symposium Digest Microwave Symposium Digest, 2006. IEEE MTT-S International. :1911-1914 Jun, 2006
Subject
Language
ISSN
0149-645X
Abstract
A ter aher tz quantum cascade laser (THz-QCL) using a resonant longitudinal optical (LO) phonon depopulation scheme was successfully demonstrated by MIT's group. We fabricated QCL structures from both a GaAs/AlGaAs material system and a GaSb/AlSb system using this scheme. The characteristics of these QCLs were compared experimentally. A smaller threshold electric field was expected for the GaSb/AlSb QCL because GaSb has smaller LO phonon energy than that of GaAs. Experimental results indicated that the threshold electric field of the GaSb/AlSb QCL was 3.2 kV/cm. These results mean that the GaSb/AlSb QCL is suitable for low input power operation. Furthermore, the GaSb/AlSb QCL on a GaAs substrate provides high optical confinement without a complicated fabr ication process.