학술논문
A new self-limited growth for the fabrication of atomically uniform quantum wires and quantum dots
Document Type
Conference
Author
Source
Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors Compound semiconductors 1997 Compound Semiconductors, 1997 IEEE International Symposium on. :71-74 1997
Subject
Language
Abstract
A new self-limited growth based on the control of surface migration of Ga atoms during now rate modulation epitaxial growth of GaAs on patterned substrates is demonstrated. By the use of this new growth technique, atomically uniform GaAs quantum wires and quantum dots can be realized easily, despite the existence of pattern size fluctuations in the initial substrate induced by pattern preparation processes.