학술논문

Processing and Characterization of Monolithic Passive-Matrix GaN-Based MicroLED Arrays With Pixel Sizes From 5 to 50 µm
Document Type
Periodical
Source
IEEE Photonics Journal IEEE Photonics J. Photonics Journal, IEEE. 13(5):1-9 Oct, 2021
Subject
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Light emitting diodes
Anodes
Cathodes
Etching
Microscopy
Metals
Gold
III-V semiconductor materials
Inorganic light-emitting diodes
Micro-light emitting diode array
Language
ISSN
1943-0655
1943-0647
Abstract
MicroLED arrays with the capability of switching each pixel separately with high frequency can serve as structured micro-illumination light engines for applications in sensing, optogenetics, microscopy and many others. We describe a scalable chip process chain for the fabrication of passive-matrix microLED arrays, which were integrated with PCB-based driving electronics. The arrays were produced by deep-etching of conventional planar LED structures on sapphire, followed by filling and planarization steps. The pixel resolution lies in the range of 254 to 2540 pixels-per-inch (ppi), the arrays consist of 32 x 32 pixels. Optical output powers up to 50 µW per pixel were measured. In comparison to CMOS-based approaches, the presented technology is a simplified strategy to produce microLED arrays with high pixel counts.