학술논문
Gold-tin bonding for 200mm wafer level hermetic MEMS packaging
Document Type
Conference
Author
Source
2011 IEEE 61st Electronic Components and Technology Conference (ECTC) Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st. :1610-1615 May, 2011
Subject
Language
ISSN
0569-5503
2377-5726
2377-5726
Abstract
Gold-Tin eutectic bonding was studied to get hermetic packaging at wafer level. Scanning Electron Microscopy cross section images showed the sealing joint morphology at different stages including before bonding and after bonding with or without thermal treatment at 400°C. Electron Dispersive X-ray Spectrometry enabled to get chemical information of observed phases. The Ni layer which was used as diffusion barrier reacts with the solder to form a nearly void free joint. Shear strength was in the range of 70MPa before and after thermal treatment at 400°C. Hermeticity was assessed by measurement of membrane deflection caused by He overpressure. The air standard leak rate was lower than 2.6×10 −11 atm.cm 3 /s. After Through Silicon Via (TSV) process, low contact resistances in the range of 10mQ were obtained for the joint as for the TSV.