부산대학교 도서관

A detailed circuit assessment of Tunneling Field Effect Transistors (TFET) versus MOSFET transistors operating at a supply voltage near device threshold is reported, including the consideration of P-TFET device design. 20nm gate-length InAs TFET and Si MOSFET device characteristics are simulated and used in circuit simulations. For ultra low power logic applications, TFET logic can operate at equal standby power and switching energy to MOSFET logic, but with better performance. The study shows that the P-TFET device has a lower I ON /I OFF ratio than the N-TFET due to the low conduction-band density of states (DOS) in III–V materials. It is shown that for a specific TFET power-performance target, the source doping level needs to be optimized.