학술논문

Structural Analysis of Longitudinal Si–C–N Precipitates in Multicrystalline Silicon
Document Type
Periodical
Source
IEEE Journal of Photovoltaics IEEE J. Photovoltaics Photovoltaics, IEEE Journal of. 3(1):566-571 Jan, 2013
Subject
Photonics and Electrooptics
Silicon
Silicon carbide
Photovoltaic cells
Tomography
Microscopy
Grain boundaries
Photovoltaic systems
precipitation
silicon
Language
ISSN
2156-3381
2156-3403
Abstract
During crystallization of multicrystalline silicon, carbon-rich liquid–solid phase-boundary layers appear, resulting in precipitation of n-type conductive Si–C–N filaments. We present an in-depth structural analysis of distinct types of filaments to support modeling of their growth. Phase-contrast microtomography down to the submicron level is used to study morphology and seeding of precipitates while still embedded in fully functional solar cell samples. A detailed transmission electron microscopy analysis and a quantitative electron energy loss spectroscopy analysis are presented, based on tomography-assisted target preparation.