부산대학교 도서관

Solar-blind photoresistors based on $\hbox{Mg}_{0.48}\hbox{Zn}_{0.52} \hbox{O}$ thin films were fabricated on $r$-plane sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy. High-quality $a$-plane-orientation single-phase wurtzite $\hbox{Mg}_{0.48}\hbox{Zn}_{0.52}\hbox{O}$ thin films are demonstrated by X-ray diffraction and absorption spectra. The MgZnO photoresistors exhibit a large dark/photoresistance ratio up to $\hbox{1.7} \times \hbox{10}^{4}$ with the light intensity of 0.61 $\hbox{mW/cm}^{2}$ at 260 nm. The spectral response shows a sharp response peak only in the solar-blind region with maximum responsivity of $\hbox{1.5} \times \hbox{10}^{-3}\ \Omega^{-1}\cdot\hbox{W}^{-1}$ .