부산대학교 도서관

In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200–1200 ${\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$ and produce a threshold voltage shift less than 0.25 V after 10 000 $s$ of stress. The resulting LFN measurements indicate that the $1/f$ noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.