학술논문

A 22-32.7 GHz Linearized LNA in 65-nm CMOS Using Multigate Transistor Technique
Document Type
Conference
Source
2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT) Microwave and Millimeter Wave Technology (ICMMT), 2023 International Conference on. :1-3 May, 2023
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Signal Processing and Analysis
Power demand
5G mobile communication
Simulation
Prototypes
Voltage
CMOS technology
Transformers
Language
Abstract
This paper presents a linearized wideband LNA in 65-nm CMOS for 28-GHz 5G applications. The prototype LNA has three common-source stages coupled by transformers. The large-signal multigate transistor (MGTR) technique is used in the last stage, utilizing auxiliary transistors to suppress the third-order distortion with little additional power consumption. Layout simulation results shows the prototype LNA achieves -5.6 to 3.8 dBm IIP3, -16.8 to -13.9 dBm IP 1dB , 20-23 dB gain, 3.4-4.4 dB NF over 22-32.7 GHz and consumes 43.6 mW from a 1 V supply.