학술논문
Optimizing RFSOI Performance through a T-shaped Gate and Nano-Second Laser Annealing Techniques
Document Type
Conference
Author
Source
2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Radio Frequency Integrated Circuits Symposium (RFIC), 2023 IEEE. :61-64 Jun, 2023
Subject
Language
ISSN
2375-0995
Abstract
We report on two experiments that were carried out in order to boost the RF performances of PD-SOI devices. In the first experiment we implemented a T-shaped gate on a nominally 40 nm long device to mimic on an advanced RFSOI platform the mushroom gate shape that is usually found in III-V devices. T-shaped gate more than halved the longitudinal gate resistance improving RF figure-of-merits for long finger devices. In a second experiment we used a nano-second laser anneal of the gate poly-Si layer. The reduction of the vertical component of the gate resistance helped to improve the performances of short finger devices.