부산대학교 도서관

The purpose of this paper is to accurately model the tunnel junction interconnect within a double-junction photovoltaic InGaP\GaAs cell. A 2-D model was created in TCAD Silvaco software to model the tunneling effect that is realized within a multi-junction cell. The tunnel junction interconnect is a critical factor in the design of multi-junction photovoltaic and the successful modeling of the junction will lead to the ability to design more efficient solar cells. The aim of this paper is to simulate the considered solar cell by varying the tunnel junction (InGaP\GaAs, GaAs\GaAs, AlGaAs\AlGaAs and InGaP\InGaP) to calculate its electrical parameters namely: open circuit voltage (V oc ), short circuit current (J sc ), fill factor (FF) and efficiency (η). We noticed that the use of InGaP\InGaP tunnel junction within the InGaP\GaAs solar cell displays a V oc =2.53V, J sc =16mA\cm −2 , FF=91.06% and an optimal efficiency η=26.72%.