학술논문
A 200/spl times/200 CCD image sensor fabricated on high-resistivity silicon
Document Type
Conference
Author
Source
International Electron Devices Meeting. Technical Digest Electron devices Electron Devices Meeting, 1996. IEDM '96., International. :911-914 1996
Subject
Language
ISSN
0163-1918
Abstract
A charge coupled device (CCD) image sensor fabricated on high-resistivity silicon is described. The resistivity, about 10,000 /spl Omega/-cm, allows for operation of the CCD with the entire 300 /spl mu/m substrate depleted. This results in better red to near infrared response when compared to conventional and thinned CCDs. In addition the CCD has good blue response when back illuminated. Since the substrate is fully depleted, thinning, with its inherent difficulties, is not necessary in order to enhance blue response.