학술논문
Proton irradiation on AC-coupled silicon microstrip detectors
Document Type
Periodical
Author
Unno, Y.; Ujiie, N.; Hinode, F.; Kohriki, T.; Kondo, T.; Iwasaki, H.; Terada, S.; Ohmoto, T.; Yoshikawa, M.; Ohyama, H.; Handa, T.; Iwata, Y.; Ohsugi, T.; O'Shaughnessy, K.; Rowe, B.; Webster, A.; Wilder, M.; Palounek, A.; Ziock, H.; Pal, T.; Frautschi, M.; Coupal, D.; Tamura, N.; Kobayashi, S.; Murakami, A.; Takashima, R.; Daigo, M.; Higuchi, M.
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 42(4):675-679 Aug, 1995
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
To test the radiation tolerance of full-size detectors, four large-area AC-coupled single-sided silicon microstrip detectors were fabricated. The detectors had a size of 6 cm/spl times/3.4 cm and were made out of a 300 /spl mu/m thick, high-resistivity, n-type silicon, simulating the p-side of the double-sided silicon microstrip detectors being developed. The AC coupling layer had either a single layer of SiO/sub 2/ or double layers of SiO/sub 2/ and Si/sub 3/N4. In combination with the surface passivation of SiO/sub 2/ or Si/sub 3/N4. The detectors were irradiated at room temperature by 500 MeV protons at TRIUMF to a fluence of 5.7/spl times/10/sup 13/ protons/cm/sup 2/, promptly stored at O/spl deg/C after irradiation, and periodically measured over the following year. The full depletion voltages showed a substantial annealing and a gradual anti-annealing. The result was compared with the predictions of existing damage parameterization. Time variation of other characteristics, such as leakage current, interstrip and coupling capacitances, and strip-edge microdischarges was also followed.ETX