학술논문
Effect of passivation on selectively grown sub-µm Ge-on-Si single photon avalanche diode detectors
Document Type
Conference
Author
Source
2023 IEEE Silicon Photonics Conference (SiPhotonics) Silicon Photonics Conference (SiPhotonics), 2023 IEEE. :1-2 Apr, 2023
Subject
Language
ISSN
1949-209X
Abstract
Ge-on-SOI (silicon-on-insulator) single photon avalanche diodes (SPADs) have been fabricated with exposed sidewalls allowing variation of passivation techniques. Reduced dark currents and density of surface states are demonstrated with thermal oxide passivation, demonstrating the benefit of optimal passivation of low aspect ratio selectively grown Ge.