학술논문
Strained silicon on insulator substrates for fully depleted application
Document Type
Conference
Author
Source
2012 IEEE International Conference on IC Design & Technology IC Design & Technology (ICICDT), 2012 IEEE International Conference on. :1-4 May, 2012
Subject
Language
ISSN
2381-3555
Abstract
Smart Cut™ technology is used to manufacture Strained-SOI (sSOI) substrates. These substrates are proposed to boost performance for both planar and FinFET Fully Depleted SOI devices. To comply with tight transistor variability requirements, strong emphasis has been put on layer thickness control and low stress variation. A 1.2 Å RMS roughness and less than 10% stress fluctuation are already demonstrated for sSOI wafers.