학술논문

Ultrafast InGaAs photoswitch for RF signal processing
Document Type
Conference
Source
2017 International Conference on Optical Network Design and Modeling (ONDM) Optical Network Design and Modeling (ONDM), 2017 International Conference on. :1-5 May, 2017
Subject
Communication, Networking and Broadcast Technologies
Photonics and Electrooptics
Ultrafast optics
Optical pulses
Radio frequency
Optical fibers
Indium gallium arsenide
Bandwidth
Photoconductive sampling
ion implanted InGaAs
ultrafast electronics
metal-semiconductor-metal devices
radio over fiber
photonic assisted data processing
heterodyne photomixer
Language
Abstract
Optical processing of radiofrequency signals is demonstrated in this communication using photoswitches made from nitrogen ion implanted InGaAs. The sampling device shows an ultrafast picosecond response time while activated by ultra-short optical pulses or modulated optical beam centered at the wavelength of 1.55 µm. The optoelectronic device is embedded in a microwave coplanar waveguide which has a high electrical bandwidth allowing to process signals in the 1–67 GHz band. We investigate the potentiality of this component to be used either in photonic assisted sampling for future analog-to-digital converters or in photonic assisted heterodyne detection of RF modulated carriers.