부산대학교 도서관

MOS capacitor with highly leaky gate dielectric requires source and drain to support the inversion charges. This transistor-like capacitor for capacitance–voltage ($C$ –$V$) measurement has become popular due to the need of accurately measuring inversion capacitance. The source and drain overlap capacitance is an unavoidable error and must be quantified. Although it is possible to measure the overlap capacitance directly, conventional method is not reliable due to high leakage. Here, we show that this error can be corrected in the new time-domain-reflectometry $C$–$V$ measurement method introduced recently for highly leaky capacitors.