학술논문
InAs/GaAs quantum dots: a material for very highspeed, long-wavelength photodetectors on GaAs
Document Type
Conference
Source
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Indium phosphide and related materials Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on. :327-332 1999
Subject
Language
ISSN
1092-8669
Abstract
The potential of InAs/GaAs quantum dots (QDs) as photoactive material for very high-speed long-wavelength photodetectors on GaAs substrate is evaluated. We report on the dynamic photoresponse of surface-illuminated metal-semiconductor-metal (MSM) detectors containing one absorbing InAs/GaAs QD layer which is grown by MOCVD. Moreover, we present data on the internal quantum efficiency near 1.3 /spl mu/m which provide an upper estimate of the /spl alpha/d product of a single QD layer. A 3-dB bandwidth of 35 GHz and a 1.3-/spl mu/m internal efficiency of -3.1/spl times/10/sup -4/ is observed. A novel traveling-wave configuration of an InAs/GaAs QD MSM detector with drastically improved quantum efficiency is proposed and analyzed.