학술논문
Waveguide-integrated InP/InGaAs/InAlGaAs MSM photodetector for operation at 1.3 and 1.55 /spl mu/m
Document Type
Conference
Source
Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) Indium phosphide and related materials Indium Phosphide and Related Materials, 1998 International Conference on. :266-268 1998
Subject
Language
ISSN
1092-8669
Abstract
High-speed multi-wavelength waveguide-integrated metal-semiconductor-metal (MSM) photodetectors based on MOCVD grown InP/lnGaAs/InAlGaAs layers are reported. The evanescent field coupled detectors have an absorbing layer thickness of only 150 nm and an electrode feature size as small as 0.3 /spl mu/m. An internal coupling efficiency of /spl ges/90% has been achieved for detector lengths as short as 20 /spl mu/m and 30 /spl mu/m at 1.3 and 1.55 /spl mu/m wavelength, respectively. A 3-dB bandwidth of 50 GHz at 1.55 /spl mu/m wavelength has been obtained.