학술논문

Waveguide-integrated InP/InGaAs/InAlGaAs MSM photodetectors
Document Type
Conference
Source
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Indium phosphide and related materials Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on. :223-225 1996
Subject
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Photonics and Electrooptics
Indium phosphide
Indium gallium arsenide
Photodetectors
Optical waveguides
Detectors
Impedance matching
Absorption
Refractive index
Iron
Strips
Language
Abstract
We report on novel waveguide-integrated MSM photodetectors with significantly enlarged coupling efficiency. This is achieved by using a vertically coupled In/sub 0.53/Al/sub 0.31/Ga/sub 0.16/As:Fe buried strip waveguide embedded in InP:Fe. The optical coupling efficiency from the guide into the photo-absorbing InGaAs:Fe was modeled using eigenmode calculations. The simulation results and the experimental data indicate that for an absorber thickness greater than 300 nm a coupling length as short as 15 /spl mu/m is sufficient for 95% absorption. The high vertical coupling efficiency is obtained without using an additional impedance matching layer.