학술논문
Large area InGaAs MSM photodetectors
Document Type
Conference
Author
Source
1993 (5th) International Conference on Indium Phosphide and Related Materials Indium phosphide and related materials Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on. :627-629 1993
Subject
Language
Abstract
The authors report on high-performance InGaAs metal-semiconductor-metal (MSM) photodetectors for large area applications. Fe-doping was employed to obtain the high-resistivity InGaAs:Fe photoactive layer and the InP:Fe Schottky-barrier enhancement layer. The fabricated interdigitated MSM detectors have an active area of 350 /spl mu/m /spl times/ 350 /spl mu/m. At typical operating bias of 10 V, a capacitance of 1.6 pF and almost 1 GHz electrical bandwidth was achieved. The devices are very attractive for large area photoreceivers since they consume high-sensitivity and large-bandwidth operation due to low capacitive loading.ETX