학술논문

Alignment optimization and residual analysis for critical DUV photolithography
Document Type
Conference
Source
10th Annual IEEE/SEMI. Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 99 Proceedings (Cat. No.99CH36295) Semiconductor manufacturing 99 Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI. :378-387 1999
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Lithography
Semiconductor device modeling
Vectors
Filters
Production
Filtering
Data engineering
Manufacturing processes
Sampling methods
Semiconductor device manufacture
Language
ISSN
1078-8743
Abstract
This work examines the alignment residual data for photolithography imaging in relationship to the maximum-minimum measured overlay values with linear factors corrected. Within the scope of this work, the relationships of maximum and minimum overlay vectors are examined instead of a three-sigma value characterizing the overlay. (The maximum vector is very close to a three sigma number, and the effective analysis would not be very different if three-sigma metric had been considered.) Such evaluation can lead to the understanding of what levels of alignment residuals are required to meet corresponding overlay budgets. It can be used to choose the alignment strategy or as a filter of real-time production alignment data.