학술논문
The Cause of Subthreshold Leakage Currents Induced by Nucleons and Ions in Power MOSFETs
Document Type
Periodical
Author
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 60(4):2530-2536 Aug, 2013
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
Additional evidence is presented and discussed on the mechanism for the subthreshold leakage currents induced in power MOSFETs by single nucleon and ion interactions. The new evidence excludes microdose in gate oxides and instead points to microdose in field/edge oxides.