학술논문

280-GHz Frequency Multiplier Chains in 250-nm InP HBT Technology
Document Type
Periodical
Source
IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 58(9):2421-2429 Sep, 2023
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Computing and Processing
Harmonic analysis
Transistors
Power harmonic filters
Power generation
Bandwidth
Cutoff frequency
Phase locked loops
Balanced frequency doubler
double heterojunction bipolar transistor (DHBT)
frequency multiplier
H-band
high spectral purity
indium phosphide (InP)
mm-wave
spurious harmonic rejection
Language
ISSN
0018-9200
1558-173X
Abstract
We report 280 GHz 8:1 and 16:1 frequency multipliers in 250-nm indium phosphide (InP) HBT technology. The 8:1 multiplier uses three cascaded push-push emitter-coupled-pairs serving as balanced frequency doublers, with 1:1 transformers at 35, 70, and 140 GHz providing single-ended to differential conversion; the 16:1 multiplier has an additional input emitter-coupled push-push doubler whose drive signal is generated by a transistor differential input stage. With −2 dBm input power, the 8:1 multiplier generates −0.6 dBm output power at 280 and has 48-GHz 3-dB bandwidth. Spurious harmonics are suppressed by >28 dBc over the 3-dB bandwidth. With −13 dBm input power, the 16:1 multiplier generates −0.6 dBm output power at 280 and has 44-GHz 3-dB bandwidth. Spurious harmonics are suppressed by >26 dBc over the 3-dB bandwidth. The 8:1 and 16:1 multipliers consume 102- and 162-mW dc power and occupy 0.4- and 0.75-mm2 die area, respectively. To the authors’ knowledge, these results demonstrate record spectral purity for frequency multiplier chains operating near 280 GHz.