학술논문
Time Resolution of a SiGe BiCMOS Monolithic Silicon Pixel Detector without Internal Gain Layer with a Femtosecond Laser
Document Type
Working Paper
Author
Milanesio, M.; Paolozzi, L.; Moretti, T.; Latshaw, A.; Bonacina, L.; Cardella, R.; Kugathasan, T.; Picardi, A.; Elviretti, M.; Rücker, H.; Cardarelli, R.; Cecconi, L.; Fenoglio, C. A.; Ferrere, D.; Gonzalez-Sevilla, S.; Iodice, L.; Kotitsa, R.; Magliocca, C.; Nessi, M.; Pizarro-Medina, A.; Iglesias, J. Sabater; Semendyaev, I.; Saidi, J.; Pinto, M. Vicente Barreto; Zambito, S.; Iacobucci, G.
Source
Subject
Language
Abstract
The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Silicon wafers with 50 {\mu}m thick epilayer with a resistivity of 350 {\Omega}cm were used to produce a fully depleted sensor. At the highest frontend power density tested of 2.7 W/cm2, the time resolution with the femtosecond laser pulses was found to be 45 ps for signals generated by 1200 electrons, and 3 ps in the case of 11k electrons, which corresponds approximately to 0.4 and 3.5 times the most probable value of the charge generated by a minimum-ionizing particle. The results were compared with testbeam data taken with the same prototype to evaluate the time jitter produced by the fluctuations of the charge collection.
Comment: Submitted to JINST
Comment: Submitted to JINST