학술논문
Radio Frequency Plasma Transition Caused by Gas Puffing and/or Direct Current Biasing Using Multiturn Internal Antenna
Document Type
Article
Author
Source
Japanese Journal of Applied Physics; January 2012, Vol. 51 Issue: 1 p01AA02-01AA07, 6p
Subject
Language
ISSN
00214922; 13474065
Abstract
The transitions between capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) were investigated using chemical vapor deposition (CVD) plasma with the internal RF multiturn antenna. The typical electron densities of both $10^{15}$/m3in CCP mode and $10^{17}$/m3in ICP mode were measured, and the measured electron temperature profile was hollow in the CCP mode, which was in contrast to the broadened temperature profile in the ICP mode. Finally, we succeeded in controlling the RF plasma transition by changing the gas density and also by supplying the direct current (DC) voltage.