학술논문
Sub-9 nm high-performance and low-power transistors based on an in-plane NbSe2 /MoSe2 /NbSe2 heterojunction.
Document Type
Article
Author
Source
Nanoscale; 11/14/2023, Vol. 15 Issue 42, p17029-17035, 7p
Subject
Language
ISSN
20403364