학술논문
Kinetics study of vacancy-oxygen-related defects in monocrystalline solar silicon.
Document Type
Article
Source
Subject
*CRYSTAL defects
*CHEMICAL kinetics
*SINGLE crystals
*FOURIER transform infrared spectroscopy
*SILICON
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Language
ISSN
0370-1972
Abstract
In this work, diffusion and dissociation mechanisms related to the formation and evolution of vacancy-oxygen complexes have been studied. Czochralski-grown silicon samples have been irradiated at room temperature using fast electrons resulting in the formation of several defects including vacancy-oxygen complexes (VO [ABSTRACT FROM AUTHOR]