학술논문

Annealing dynamics of irradiation-induced defects in high-purity silicon in the presence of hydrogen.
Document Type
Article
Source
Physical Review B: Condensed Matter & Materials Physics. Feb2012, Vol. 85 Issue 8, p1-7. 7p.
Subject
*POINT defects
*ANNEALING of crystals
*IRRADIATION
*SILICON
*HYDROGEN
*CONDUCTION bands
*DISSOCIATION (Chemistry)
*TEMPERATURE effect
*MATHEMATICAL models
Language
ISSN
1098-0121
Abstract
A reaction model explaining (i) the hydrogen-mediated transformation of the vacancy-oxygen ( VO) center into a vacancy-oxygen-hydrogen center (VOH*), with an energy level at 0.37 eV below the conduction-band edge (Ec), and (ii) the passivation of the divacancy center is presented. VOH* dissociates with a rate of 2 x 10-5s-1 at 195 ° C, causing VO to recover after long duration (> 104 min), while a similar evolution occurs at 300 ( ' on a time scale of the order of 10 min. The diffusivity of the monatomic hydrogen used in the model agrees closely with the established values for the diffusivity of protons. After the recovery of VO, further annealing at higher temperatures and/or longer durations transforms VO into the "ordinary" vacancy-oxygen-hydrogen center with an energy level at Ec -- 0.32 eV (VOH). VOH is subsequently transformed into VOH2. For temperatures above 250 °C, two additional hydrogen-related levels occur (∼ 0.17 and ∼0.58eV below Ec) with a one-to-one ratio and a possible association with different charge states of a V2OH center is discussed. [ABSTRACT FROM AUTHOR]